Nanostructuring methods for enhancing light absorption rate of Si-based photovoltaic devices: A review
Soonwook Hong, Jiwoong Bae, Bongjun Koo, Ikwhang Chang, Gu Young Cho, Young-Beom Kim, Suk Won Cha, Fritz B. Prinz
Abstract In recent years, there has been growing consideration of renewable energy especially photovoltaic devices. A silicon (Si) based solar cell is the most popularly and frequently considered among the photovoltaic devices, but its bulk thickness issue lowers the performance and hinders widespread application due to the material cost. Also, this thick nature causes difference in length between minority carrier diffusion and sufficient light absorption. To mitigate the issues there have been many recent studies on Si photovoltaic devices adopting nanostructuring strategies to enhance the performance. Therefore, we report two different approaches on recent nanostructuring techniques for photovoltaic devices; bottom-up and top-down processes, which are composed of vapor-liquid-solid, solution-liquid-solid, reactive ion etching with Langmuir Blodgett and metal assisted chemical etching. Those fabrication processes enable the fabrication of nanostructures with a highly ordered and alignment structures leading to enhance the light absorption and have an appropriate thickness of Si substrate regressing Auger recombination. The fabricated nanowire and nanocone array structures outperform existing results with light absorption exceeding 90%.